Selected Publications - Dr Jo Shien Ng
Refereed journal papers
D S G Ong, J S Ng, M M Hayat, P Sun, and J P R David
Optimization of InP APDs for high-speed lightwave systems
IEEE. J. Lightwave Tech.
submitted 2008
J E Lees, D J Bassford, J S Ng, C H Tan, and J P R David
AlGaAs diodes for X-ray spectroscopy
Nucl. Inst. Meth. A
submitted 2008
L J J Tan, J S Ng, C H Tan, and J P R David
Avalanche noise characteristics in submicron InP diodes
IEEE. J. Quan. Electronics
44(4), p. 378-382, April 2008
L J J Tan, J S Ng, C H Tan, M Hopkinson, and J P R David
Effect of dead space on low-field avalanche multiplication in InP
IEEE. Trans. Electron Devices
54(8), p. 2051-2054, August 2007
C H Tan, J S Ng, G J Rees, and J P R David
Statistics of avalanche current buildup time in single-photon avalanche diodes
IEEE. J. Sel. Top. Quan. Electronics
13(4), July/August 2007
S J Dimler, J S Ng, R C Tozer, G J Rees, and J P R David
Capacitive quenching measurement circuit for Geiger mode avalanche photodiodes
IEEE. J. Sel. Top. Quan. Electronics
13(4), July/August 2007
Y L Goh, A R J Marshall, D J Massey, J S Ng, C H Tan, M Hopkinson, J P R David, S K Jones, C C Button, and S M Pinches
Excess avalanche noise in In0.53Al0.48As
IEEE. J. Quan. Electronics
43(6), p. 503-507, June 2007
J S Ng, W M Soong, M J Steer, M Hopkinson, J P R David, J Chamings, S J Sweeney, and A R Adams
Long wavelength bulk GaInNAs p-i-n photodiodes lattice-matched to GaAs
J. Appl. Phys.
101, 064506, Mar 2007
J S Ng, C H Tan, G J Rees and J P R David
Effects of dead space on breakdown probability in Geiger mode avalanche photodiode
J. Modern Optics
54(2-3), pp. 353-360, Jan-Feb 2007
Y L Goh, D J Massey, A R J Marshall, J S Ng, C H Tan, W K Ng, G J Rees, M Hopkinson, J P R David, and S K Jones
Avalanche multiplication in InAlAs
IEEE. Trans. Electron Devices
54(1), p. 11-16, Jan 2007
J S Ng, H Y Liu, M J Steer, M Hopkinson and J P R David
Photoluminescence beyond 1.5μm from InAs quantum dots
Microelectronics Journal
37, pp. 1468-1470, July 2006
S Pellegrini, R E Warburton, L J J Tan, J S Ng, A Krysa, K Groom, J P R David, S Cova, M J Robertson and G S Buller
Design and performance of an InGaAs/InP single-photon avalanche diode detector
IEEE. J. Quan. Electronics
42(4), p. 397-403, Apr 2006
H Y Liu, M J Steer, T J Badock, D J Mowbray, M S Skolnick, F Suarez, J S Ng, M Hopkinson and J P R David
Room-temperature 1.6μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer
J. Appl. Phys.
99, 046104, 2006
Y L Goh, J S Ng, C H Tan, W K Ng, and J P R David
Excess noise measurement in In0.53Ga0.47As
Photonics Technol. Lett.
17(11), p. 2412-2414, Nov 2005
J S Ng, C H Tan, J P R David and G J Rees
Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes
IEEE. J. Quan. Electronics
41 (8), Aug 2005
H Y Liu, I R Sellers, T J Badcock, D J Mowbray, M S Skolnick, K M Groom, M Cuitierrez, M Hopkinson, J S Ng and J P R David
Improved performance of 1.3μm multiplayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer
Appl. Phys. Lett.
85(5), p.704-706, Aug 2004
J S Ng, C H Tan and J P R David
A comparison of avalanche breakdown probabilities in semiconductor materials
J. Modern Optics
51(9-10), p. 1315-1321, Jul 2004
C H Tan, G J Rees, P A Houston, J S Ng, W K Ng and J P R David
Temperature dependence of electron impact ionization in In0.53Ga0.47As
Appl. Phys. Lett.
84(13), p.2322-2324, Mar 2004
W K Ng, C H Tan, J P R David, P A Houston, M Yee and J S Ng
Temperature dependent low-field electron multiplication in In0.53Ga0.47As
Appl. Phys. Lett.
83(14), p.2820-2822, Oct 2003
H Y Liu, M H Hopkinson, P Navaretti, M Gutierrez, J S Ng and J P R David
Improving optical properties of 1.55μm GaInNAs/GaAs multiple quantum wells with Ga(In)Nas barrier and spacer layer
Appl. Phys. Lett.
83(24), p.4951-4953, Dec 2003
J S NG, C H Tan, J P R David, G Hill and G J Rees
Field dependence of In0.53Ga0.47As impact ionization coefficients
IEEE Trans. Electron Devices
50 (4), p. 901-905, April 2003
J S NG, C H Tan, J P R David and G J Rees
A general method for estimating the duration of avalanche multiplication
Semicond. Sci. Tecnol
17, p. 1067-1071, Sept 2002
J S Ng, J P R David, G J Rees and J Allam
Avalanche breakdown in In0.53Ga0.47As
J. Appl. Phys.
91 (8), p. 5200-5202, April 2002
J S Ng, C H Tan, B K Ng, P J Hambleton, J P R David, G J Rees, A H You and D S Ong
Effect of dead space on avalanche speed
IEEE Trans. Electron Devices
49 (4), p. 544-549, April 2002
Symposia and compiled volumes
W M Soong, J S Ng, M J Steer, M Hopkinson, J P R David, J Chamings, S J Sweeney, A R Adams
Dark current mechanisms in bulk GaInNAs photodiodes
20th International Conference on Indium Phosphide and Related Materials, Versailles, May 2008
D S G Ong, J S Ng, J P R David, M M Hayat, and P Sun
Optimization of InP APDs for high-speed lightwave systems
20th International Conference on Indium Phosphide and Related Materials, Versailles, May 2008
L J J Tan, J S Ng, C H Tan, and J P R David
Impact ionization of sub-micron InP structures
IEEE LEOS Annual Meeting, Orlando, Oct 2007
J S Ng, L J J Tan, D S G Ong, C H Tan, and J P R David
Temperature dependence of breakdown voltage of InP and InAlAs avalanche photodiodes
IEEE LEOS Annual Meeting, Orlando, Oct 2007
S J Dimler, J S Ng, R C Tozer, and J P R David
Capacitive quenching for dark count characteristics of single photon avalanche photodiodes
Single-Photon Workshop, Turin, Sept 2007
R E Warburton, G S Buller, S Pellegrini, J P R David, J S Ng, L J J Tan, A Krysa, and S Cova
InGaAs/InP single-photon avalanche diodes- device performance and afterpulsing analysis
Single-Photon Workshop, Turin, Sept 2007
Y L Goh, J S Ng, C H Tan, J P R David, R Sidhu, A L Holmes, Jr., and J C Campbell
InP-based avalanche photodiodes with >2.1μm detection capability
International Conference on Indium Phosphide and Related Materials, Matsue, Japan, May 2007
J S Ng, W M Soong, M J Steer, M Hopkinson, J P R David, J Chamings, A R Adams, S J Sweeney, and J Allam
GaInNAs lattice-matched to GaAs for photodiodes
International Conference on Indium Phosphide and Related Materials, Matsue, Japan, May 2007
D S G Ong, J S Ng, L J J Tan, C H Tan, and J P R David
Temperature dependence of InP-based avalanche photodiodes
International Conference on Indium Phosphide and Related Materials, Matsue, Japan, May 2007
C H Tan, Y L Goh, A R J Marshall, L J J Tan, J S Ng, and J P R David
Extremely low excess noise InAlAs avalanche photodiodes
International Conference on Indium Phosphide and Related Materials, Matsue, Japan, May 2007
W M Soong, J S Ng, M J Steer, M Hopkinson, J P R David, J Chamings, S Sweeney, and A R Adams
Bulk p-i-n GaInNAs photodiodes lattice-matched to GaAs
Photon, Manchester, Sept 2006
S Pellegrini, R E Warburton, L J J Tan, J S Ng, A Krysa, K Groom, J P R David, S Cova, and G S Buller
A study of the afterpulsing phenomenon in InGaAs/InP single photon avalanche diodes
Photon, Manchester, Sept 2006
J S Ng, C H Tan, J P R David
Multiplication and excess noise of avalanche photodiodes with InGaAs absorption layer
IEE Proc. Optoelectronics, 2006
A R J Marshall, C H Tan, J S Ng, J P R David, and M Hopkinson
Mid infrared avalanche photodiodes
3rd EMRS DTC Annual Technical Conference, Edinburgh, Jul 2006
Y L Goh, J S Ng, C H Tan, J P R David, R Sidhu, A L Holmes, Jr., and J C Campbell
Impact ionisation in InGaAs/GaAsSb type-II heterojunction multiple quantum well photodiode
Semiconductor and Integrated Optoelectronics conference, Cardiff, Apr 2006
J S Ng, W M Soong, M J Steer, M Hopkinson, J P R David, J Chamings, A R Adams and S Sweeney
1.3μm high quality bulk InGaAsN diodes lattice-matched to GaAs
Semiconductor and Integrated Optoelectronics conference, Cardiff, Apr 2006
A R J Marshall, L J J Tan, C H Tan, J S Ng, and J P R David
Lower limit of multiplication noise in InP/InGaAs APDs
Semiconductor and Integrated Optoelectronics conference, Cardiff, Apr 2006
W M Soong, J S Ng, M J Steer, M Hopkinson, J P R David, J Chamings, S Sweeney and A R Adams
Dark current characteristics in thick bulk GaInAsN lattice-matched to GaAs
GaInNAs One Day Meeting, Cardiff, Apr 2006
N F Hasbullah, J S Ng, H Y Liu, M Hopkinson, J P R David, T J Badcock, D J Mowbray and M S Skolnick
Optimizing quantum dot laser structures through current-voltage measurements
Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces, Nottingham, Apr 2006
G S Buller, S Pellegrini, R E Warburton, J P R David, J S Ng, A Krysa, K M Groom, L J J Tan and S Cova
Growth, fabrication and characterization of InGaAs/InP single-photon avalanche diode detectors
Single Photon Workshop, National Physical Laboratory, UK, Oct 2005
L J J Tan, J S Ng, J P R David, A Krysa, K M Groom, G J Rees and R C Tozer
Single Photon Detector at 1.55μm
2nd EMRS DTC Annual Technical Conference, Edinburgh, Jun 2005
J S Ng, C H Tan and J P R David
Excess Noise of Avalanche Photodiodes with InGaAs Absorber
Semiconductor and Integrated Optoelectronics conference, Cardiff, Mar 2005
L J J Tan, J S Ng, J P R David, A Krysa, K M Groom, G J Rees, R C Tozer, S Pellegrini, G S Buller, R E Warburton
In0.53Ga0.47As / InP APD for Single Photon Detection at 1.55µm
Semiconductor and Integrated Optoelectronics conference, Cardiff, Mar 2005
M Soong, J S Ng, M J Steer, M Hopkinson and J P R David
1.25μm lattice-matched bulk dilute nitride (InGaAsN)
Semiconductor and Integrated Optoelectronics conference GaInAsN one-day meeting, Cardiff, Mar 2005
C H Tan, J S Ng, G J Rees, R C Tozer and J P R David
Low Noise sub-micron Avalanche Photodiodes
Asia Pacific Microwave Conference, India, Dec 2004
H Y Liu, H D Sun, P Naveretti, J. S. Ng, M Hopkinson, A H Clark and M D Dawson
1.55μm GaInNAs/GaAs multiple quantum wells with GaInNAs quaternary barrier and space layer
13th International Conference on Semiconducting and Insulating Materials, Beijing, China, Sept 2004
T J Badcock, I R Sellers, H Y Liu, K M Groom, M Gutierrez, R Beanland, J S Ng, M Hopkinson, J P R David, D J Mowbray and M S Skolnick
Enhanced 1.3μm InAs Quantum Dot Structures and Laser Devices with the Incorporation of High Growth Temperature GaAs Spacer Layers
Photon 2004, Glasgow, UK, Sept 2004
D J Massey, J S Ng, J P R David and G J Rees
Temperature dependence of the Breakdown Voltage in In0.52Al0.48As
Photon 2004, Glasgow, UK, Sept 2004
W M Soong, P Navaretti, H Y Liu, J S Ng, K M Groom, M Hopkinson and J P R David
InGaAsN Based Photodetectors
Photon 2004, Glasgow, UK, Sept 2004
S Pellegrini, G S Buller, J M Smith, A Krysa, K M Groom, J S Ng, L J Tan, G Hill, J P R David and G J Rees
First Custom Made InGaAs/InP Single Photon Avalanche Detector: Fabrication and Characterisation
Photon 2004, Glasgow, UK, Sept 2004
K M Groom, H Y Liu, I R Sellars, T Badcock, M Gutiérrez, S K Ray, J S Ng, M Hopkinson, R Hogg, J P R David, D J Mowbray and M S Skolnick
Characteristics of low threshold quantum dot lasers operating at 1.31µm and a study of their carrier recombination
46th Electronic Materials Conference, Notre Dame, Indiana, Jun 2004
B. K. Ng, J. P. R. David, W. M. Soong, J. S. Ng, C. H. Tan, H. Y. Liu, M. Hopkinson and P. N. Robson
Low noise GaAs-based avalanche photodiodes for long wavelength applications
62nd Device Research Conference, Notre Dame, Indiana, Jun 2004
J S Ng, L. Tan, J. P. R. David, G. J. Rees, C. H. Tan, K. M. Groom and M. Hopkinson
An investigation into III-V infrared avalanche photodiodes
1st EMRS DTC Annual Technical Conference, Edinburgh, May 2004
M Gutiérrez, M Hopkinson, J S Ng, H Y Liu
Strain Interaction and Defect Formation in Stcked InGaAs Quantum Dot and Dot-in-Well structures
Quantum Dots 2004, Banff, Alberta, Canada, May 2004
Gutiérrez, M Hopkinson, J S Ng, H Y Liu, M Herrera, D González and R García
Critical barrier thickness for the formation of InGaAs quantum dots
J S Ng, C H Tan, J P R David, and G J Rees
Theoretical study of breakdown probabilities in single photon avalanche photodiode
IEEE Laser Electro-Optics Annual Meeting, Tucson, Arizona, US, October 2003
J S Ng, M Yee, J P R David, P A Houston, G J Rees and G Hill
In0.53Ga0.47As ionization coefficients deduced from photomultiplication measurements
29th International Symposium on Compound Semiconductors, Lausanne, Switzerland, October 2002
M Yee, J S Ng, J P R David, P A Houston and G J Rees
Temperature dependence of impact ionisation in In0.53Ga0.47As
European Heterostructure Technology workshop, Cardiff, October 2002
J S Ng, J P R David, G J Rees, S M Pinches and G Hill
Impact ionisation coefficients of In0.53Ga0.47As
IEE Proceedings – Optoelectronics
148 (5/6), p. 225-228, Dec 2001
B K Ng, J S Ng, P J Hambleton, D S Ong, G J Rees, R C Tozer
Design considerations for high-speed low-noise avalanche photodiodes
SPIE Conference on Design, Fabrication, and Characterization of Photonic Devices II, Singapore, November 2001
J S Ng, J P R David, G J Rees, S M Pinches and G Hill
Impact ionisation coefficients of In0.53Ga0.47As
Semiconductor and Integrated Optoelectronics conference, Cardiff, April 2001
S A Plimmer, P J Hambleton, B K Ng, G M Dunn, J S Ng, J P R David, G J Rees
How avalanche pulses evolve in space and time
Physics and simulation of optoelectronic devices IX”, San Jose, California, January 2001
Talks or Presentations
J S Ng
GaInNAs lattice-matched to GaAs for photodiodes
Hitachi Central Lab, Tokyo, Japan, May 2007. Oral presentation
D S G Ong, J S Ng, L J J Tan, C H Tan, and J P R David
Temperature dependence of InP-based avalanche photodiodes
19th International Conference on Indium Phosphide and Related Materials, Japan, 14th-18th May 2007. Poster presentation
Y L Goh, J S Ng, C H Tan, J P R David, R Sidhu, A L Holmes Jr, and J C Campbell
InP-based avalanche photodiodes with >2.1μm detection capability
19th International Conference on Indium Phosphide and Related Materials, Japan, 14th-18th May 2007. Poster presentation
J S Ng, W M Soong, M J Steer, M Hopkinson, J P R David, J Chamings, A R Adams, S J Sweeney, and J Allam
GaInNAs lattice-matched to GaAs for photodiodes
19th International Conference on Indium Phosphide and Related Materials, Japan, 14th-18th May 2007. Oral presentation
J S Ng
Avalanche photodiodes and Single photon avalanche detector
Alcatel-Thales III-V Labs, Marcoussis, France, Feb 2007
J S Ng
Single photon avalanche detector
GE, Albany, US, Nov 2006